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EGF1A - EGF1D
EGF1A - EGF1D
Features * * *
Low forward voltage drop. Low profile package. Fast switching for high efficiency.
3.93 3.73
0.181 (4.597) 0.157 (3.988) 0.062 (1.575) 0.055 (1.397)
2
1
0.114 (2.896) 0.098 (2.489)
0.208 (5.283) 0.188 (4.775)
1.67 1.47
+
2.38 2.18 5.49 5.29 Minimum Recommended Land Pattern
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
0.096 (2.438) 0.078 (1.981)
0.060 (1.524) 0.030 (0.762)
0.008 (0.203) 0.002 (0.051)
0.012 (0.305) 0.006 (0.152)
1.0 Ampere High Efficiency Glass Passivated Rectifier
Absolute Maximum Ratings*
Symbol
IO if(surge)
TA = 25C unless otherwise noted
Parameter
Average Rectified Current @ T L = 100C Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient ** Thermal Resistance, Junction to Case ** Storage Temperature Range Operating Junction Temperature
Value
1.0
Units
A
30 2.0 13 85 30 -65 to +175 -65 to +175
A W mW/C C/W C/W C C
PD RJA RJC Tstg TJ
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. **Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
Parameter
TA = 25C unless otherwise noted
Device
1A 1B 100 70 100 10 100 1.0 50 15 1C 150 105 150 1D 200 140 200 50 35 50
Units
V V V A A V ns pF
Peak Repetitive Reverse Voltage Maximum RMS Voltage DC Reverse Voltage (Rated VR) Maximum Reverse Current @ rated VR TA = 25C TA = 125C Maximum Forward Voltage @ 1.0 A Maximum Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A Typical Junction Capacitance VR = 4.0 V, f = 1.0 MHz
1998 Fairchild Semiconductor Corporation
EGF1A-EGF1D, Rev. B
EGF1A - EGF1D
Typical Characteristics
Forward Current Derating Curve
1.6 FORWARD CURRENT (A)
Forward Characteristics
100 FORWARD CURRENT (A)
TJ = 25 C A Pulse Width = 300S 2% Duty Cycle
1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 LEAD TEMPERATURE ( C) 150 175
RESISTIVE OR INDUCTIVE LOAD P.C.B. MOUNTED ON 0.2 x 0.2" (5.0 x 5.0 mm) COPPER PAD AREAS
10
1
0.1
0.01 0.2
0.4
0.6 0.8 1 1.2 FORWARD VOLTAGE (V)
1.4
1.6
Non-Repetitive Surge Current
PEAK FORWARD SURGE CURRENT (A) 40
Reverse Characteristics
1000 REVERSE CURRENT ( A)
T A = 100 C
30
100
20
10
T J = 25 C A
10
1
0
1
2
5 10 20 50 NUMBER OF CYCLES AT 60Hz
100
0.1
0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Typical Junction Capacitance
60 JUNCTION CAPACITANCE (pF) 50 40 30 20 10 0 0.1
0.5 1 2 5 10 20 50 100 REVERSE VOLTAGE (V)
500
50 NONINDUCTIVE
50 NONINDUCTIVE
+0.5A
(-)
trr
DUT
50V (approx)
50 NONINDUCTIVE
Pulse Generator (Note 2) (+)
OSCILLOSCOPE (Note 1)
0 -0.25A
NOTES: 1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf. 2. Rise time = 10 ns max; Source impedance = 50 ohms.
-1.0A
1.0cm SET TIME BASE FOR 5/ 10 ns/ cm
Reverse Recovery Time Characterstic and Test Circuit Diagram
EGF1A-EGF1D, Rev. B
SMA/DO-214AC Package Dimensions
SMA/DO-214AC (FS PKG Code P5)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in: inches [millimeters]
Part Weight per unit (gram): 0.064
0.181 (4.597) 0.157 (3.988) 0.062 (1.575) 0.055 (1.397)
3.93 3.73
2
1
0.114 (2.896) 0.098 (2.489)
1.67 1.47
+
2.38 2.18 5.49 5.29
0.208 (5.283) 0.188 (4.775)
0.096 (2.438) 0.078 (1.981)
Minimum Recommended Land Pattern
0.060 (1.524) 0.030 (0.762)
0.008 (0.203) 0.002 (0.051)
0.012 (0.305) 0.006 (0.152)
August 1999, Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrench QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8
SyncFETTM TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. D

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